Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition
Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases w...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2011-05, Vol.50 (5), p.05FB13-05FB13-4 |
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| container_end_page | 05FB13-4 |
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| container_issue | 5 |
| container_start_page | 05FB13 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 50 |
| creator | Matsumoto, Takashi Mizuguchi, Keiichi Horii, Takahiro Sano, Shiho Muranaka, Tsutomu Nabetani, Yoichi Hiraki, Satoshi Furukawa, Hideaki Fukasawa, Akihiro Sakamoto, Shingo Hagihara, Shigeru Kono, Hiroshi Kijima, Kazuhiro Abe, Osamu Yashiro, Kouji |
| description | Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both $c$ and $a$ axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed. |
| doi_str_mv | 10.1143/JJAP.50.05FB13 |
| format | Article |
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The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both $c$ and $a$ axes directions is observed for low-temperature-grown highly Ga-doped films. 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The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both $c$ and $a$ axes directions is observed for low-temperature-grown highly Ga-doped films. 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The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both $c$ and $a$ axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.50.05FB13</doi></addata></record> |
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| title | Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition |
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