Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots
Self-assembled InAs/GaAs(001) quantum dot structures before and after quenching were investigated by in situ X-ray diffraction to assess the effects of quenching. Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were q...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2011-04, Vol.50 (4), p.04DH06-04DH06-5 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Takahasi, Masamitu |
| description | Self-assembled InAs/GaAs(001) quantum dot structures before and after quenching were investigated by in situ X-ray diffraction to assess the effects of quenching. Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were quantitatively determined on the basis of three-dimensional X-ray intensity mapping. X-ray measurements after quenching revealed that the quantum dot size showed a bimodal distribution as a result of the proliferation of dislocated islands during quenching. A formula to describe the X-ray diffraction from dislocated islands with a large size distribution is presented. The cooling rate between 20 and 40 K/min was found to have little effect on the structures of quenched quantum dots. |
| doi_str_mv | 10.1143/JJAP.50.04DH06 |
| format | Article |
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Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were quantitatively determined on the basis of three-dimensional X-ray intensity mapping. X-ray measurements after quenching revealed that the quantum dot size showed a bimodal distribution as a result of the proliferation of dislocated islands during quenching. A formula to describe the X-ray diffraction from dislocated islands with a large size distribution is presented. 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Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were quantitatively determined on the basis of three-dimensional X-ray intensity mapping. X-ray measurements after quenching revealed that the quantum dot size showed a bimodal distribution as a result of the proliferation of dislocated islands during quenching. A formula to describe the X-ray diffraction from dislocated islands with a large size distribution is presented. 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Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were quantitatively determined on the basis of three-dimensional X-ray intensity mapping. X-ray measurements after quenching revealed that the quantum dot size showed a bimodal distribution as a result of the proliferation of dislocated islands during quenching. A formula to describe the X-ray diffraction from dislocated islands with a large size distribution is presented. The cooling rate between 20 and 40 K/min was found to have little effect on the structures of quenched quantum dots.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.50.04DH06</doi></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots |
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