Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy

Distributions of residual stresses in the cross-section of as-grown $c$-plane freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE) were precisely measured by low temperature cross-sectional micro-reflectance spectroscopy. Based on the measured residual stresses in the cross-sectio...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2011-01, Vol.50 (1), p.01AC01-01AC01-4
Hauptverfasser:	Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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