Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films

The characteristics of thin-film transistors (TFTs) fabricated on pseudo-single-crystal (PSX)-Si thin films were examined. The variations of mobility were more than the theoretical values derived from the crystallographic orientation dependence of a bulk Si metal--oxide--semiconductor (MOS) transist...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-12, Vol.49 (12), p.124001-124001-11
Hauptverfasser:	Mitani, Masahiro, Endo, Takahiko, Tsuboi, Shinzo, Okada, Takashi, Kawachi, Genshiro, Matsumura, Masakiyo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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