Investigation of Field Concentration Effects in Arch Gate Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory

In this paper, arch gate silicon-oxide-nitride-oxide-silicon (SONOS) flash memory is studied. The key technology for this device lies in making the device channel on an arch-shaped silicon fin. This feature enhances the electric field across the tunneling oxide by field concentration, and at the sam...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-11, Vol.49 (11), p.114202-114202-6, Article 114202
Hauptverfasser:	Lee, Jung Hoon, Lee, Gil Sung, Cho, Seongjae, Yun, Jang-Gn, Park, Byung-Gook
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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