Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers

We studied the Raman scattering of the InN epilayers with rapid thermal annealing (RTA). The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and increases asymmetric broadening as the RTA temperature is increased. We suggest that the formation of indium-related defec...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-10, Vol.49 (10), p.105803-105803-4
Hauptverfasser:	Yang, Min-De, Tong, Shih-Chang, Chou, I-Tin, Shu, Gia-Wei, Shen, Ji-Lin, Lee, Yueh-Chien, Huang, Ying-Sheng, Chen, Yang-Fang, Lin, Tai-Yuan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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