Chemical Sputtering of GaN Crystal with a Chlorine-Adsorbed Layer

A molecular dynamics simulation has been carried out to investigate the chemical sputtering of wurtzite-type GaN(0001) surfaces with and without a Cl-adsorbed layer. Sputtering of crystalline atoms is examined with Ar impacts at energies less than 250 eV. Ga sputtering does not take place at all on...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-08, Vol.49 (8), p.08JE03-08JE03-5
1. Verfasser:	Harafuji, Kenji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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