Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator

Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator

We discovered a photoluminescence phenomenon of SiON waveguide by the UV irradiation and investigated the luminescence spectrum by a conventional microscope and diffraction grating spectroscopy. It was shown from these measurements that the defect created by UV irradiation causes the UV sensitivity...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2010-07, Vol.49 (7), p.072201-072201-5
1. Verfasser: Tatewaki, Takashi
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 072201-5
container_issue 7
container_start_page 072201
container_title Japanese Journal of Applied Physics
container_volume 49
creator Tatewaki, Takashi
description We discovered a photoluminescence phenomenon of SiON waveguide by the UV irradiation and investigated the luminescence spectrum by a conventional microscope and diffraction grating spectroscopy. It was shown from these measurements that the defect created by UV irradiation causes the UV sensitivity of SiON film after thermal annealing. Next, we measured the spectrum change of a microring resonator with SiON core via single point long time UV irradiation and multi point UV irradiation. As a result, we demonstrated a selective UV trimming of microring resonator combining thermal annealing and multi point UV irradiation.
doi_str_mv 10.1143/JJAP.49.072201
format Article
fullrecord <record><control><sourceid>ipap_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_49_072201</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_49_072201</sourcerecordid><originalsourceid>FETCH-LOGICAL-c366t-d19d1012fab85e9a42e78084d4d3fed8008958667cdc44e5410c1bdb86a2adfa3</originalsourceid><addsrcrecordid>eNqFkM1LxDAUxIMoWFevnnsWWpM0TdPjurjqslpxd72GtEmWJ_0iKcL-97ZUvHp6zPCbxzAI3RIcE8KS-81m-R6zPMYZpZicoYAkLIsY5uk5CjCmJGI5pZfoyvuvUfKUkQDJwsER2rCz4eEz3JnWwwDfMJwmZwfFW7iGuglVq8MH0OBMNUDXqnqi9w6aBtrjH_oKlevc5HwYP1JD567RhVW1Nze_d4EO68f96jnaFk8vq-U2qhLOh0iTXBNMqFWlSE2uGDWZwIJpphNrtMBY5KngPKt0xZgZq-OKlLoUXFGlrUoWKJ7_jg28d8bKfmyn3EkSLKd55DSPZLmc5xkDd3MAetX_B_8AUmNk8w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Tatewaki, Takashi</creator><creatorcontrib>Tatewaki, Takashi</creatorcontrib><description>We discovered a photoluminescence phenomenon of SiON waveguide by the UV irradiation and investigated the luminescence spectrum by a conventional microscope and diffraction grating spectroscopy. It was shown from these measurements that the defect created by UV irradiation causes the UV sensitivity of SiON film after thermal annealing. Next, we measured the spectrum change of a microring resonator with SiON core via single point long time UV irradiation and multi point UV irradiation. As a result, we demonstrated a selective UV trimming of microring resonator combining thermal annealing and multi point UV irradiation.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.49.072201</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2010-07, Vol.49 (7), p.072201-072201-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c366t-d19d1012fab85e9a42e78084d4d3fed8008958667cdc44e5410c1bdb86a2adfa3</citedby><cites>FETCH-LOGICAL-c366t-d19d1012fab85e9a42e78084d4d3fed8008958667cdc44e5410c1bdb86a2adfa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tatewaki, Takashi</creatorcontrib><title>Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator</title><title>Japanese Journal of Applied Physics</title><description>We discovered a photoluminescence phenomenon of SiON waveguide by the UV irradiation and investigated the luminescence spectrum by a conventional microscope and diffraction grating spectroscopy. It was shown from these measurements that the defect created by UV irradiation causes the UV sensitivity of SiON film after thermal annealing. Next, we measured the spectrum change of a microring resonator with SiON core via single point long time UV irradiation and multi point UV irradiation. As a result, we demonstrated a selective UV trimming of microring resonator combining thermal annealing and multi point UV irradiation.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LxDAUxIMoWFevnnsWWpM0TdPjurjqslpxd72GtEmWJ_0iKcL-97ZUvHp6zPCbxzAI3RIcE8KS-81m-R6zPMYZpZicoYAkLIsY5uk5CjCmJGI5pZfoyvuvUfKUkQDJwsER2rCz4eEz3JnWwwDfMJwmZwfFW7iGuglVq8MH0OBMNUDXqnqi9w6aBtrjH_oKlevc5HwYP1JD567RhVW1Nze_d4EO68f96jnaFk8vq-U2qhLOh0iTXBNMqFWlSE2uGDWZwIJpphNrtMBY5KngPKt0xZgZq-OKlLoUXFGlrUoWKJ7_jg28d8bKfmyn3EkSLKd55DSPZLmc5xkDd3MAetX_B_8AUmNk8w</recordid><startdate>201007</startdate><enddate>201007</enddate><creator>Tatewaki, Takashi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201007</creationdate><title>Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator</title><author>Tatewaki, Takashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-d19d1012fab85e9a42e78084d4d3fed8008958667cdc44e5410c1bdb86a2adfa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tatewaki, Takashi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tatewaki, Takashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2010-07</date><risdate>2010</risdate><volume>49</volume><issue>7</issue><spage>072201</spage><epage>072201-5</epage><pages>072201-072201-5</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We discovered a photoluminescence phenomenon of SiON waveguide by the UV irradiation and investigated the luminescence spectrum by a conventional microscope and diffraction grating spectroscopy. It was shown from these measurements that the defect created by UV irradiation causes the UV sensitivity of SiON film after thermal annealing. Next, we measured the spectrum change of a microring resonator with SiON core via single point long time UV irradiation and multi point UV irradiation. As a result, we demonstrated a selective UV trimming of microring resonator combining thermal annealing and multi point UV irradiation.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.49.072201</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2010-07, Vol.49 (7), p.072201-072201-5
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_49_072201
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T17%3A58%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ipap_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Origin%20of%20UV%20Sensitivity%20of%20SiON%20Film%20and%20Bidirectional%20UV%20Trimming%20of%20SiON%20Microring%20Resonator&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Tatewaki,%20Takashi&rft.date=2010-07&rft.volume=49&rft.issue=7&rft.spage=072201&rft.epage=072201-5&rft.pages=072201-072201-5&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.49.072201&rft_dat=%3Cipap_cross%3E10_1143_JJAP_49_072201%3C/ipap_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true