Fundamental Studies on the Acid Generator to Improve the Resolution, Line Width Roughness, and Sensitivity Tradeoff under Ionizing Radiation

The effects of acid generation efficiency and other properties on the resolution, line width roughness (LWR), and sensitivity (RLS) tradeoff for extreme ultraviolet (EUV) photoresists were evaluated under electron beam (EB) exposure. The acid generators (AGs) introducing a trifluoromethyl group as a...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-06, Vol.49 (6), p.06GF03-06GF03-5
Hauptverfasser: Utsumi, Yoshiyuki, Irie, Makiko, Komuro, Yoshitaka, Matsuzawa, Kensuke, Hada, Hideo, Haga, Takashi, Ogawa, Satoshi
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container_end_page 06GF03-5
container_issue 6
container_start_page 06GF03
container_title Japanese Journal of Applied Physics
container_volume 49
creator Utsumi, Yoshiyuki
Irie, Makiko
Komuro, Yoshitaka
Matsuzawa, Kensuke
Hada, Hideo
Haga, Takashi
Ogawa, Satoshi
description The effects of acid generation efficiency and other properties on the resolution, line width roughness (LWR), and sensitivity (RLS) tradeoff for extreme ultraviolet (EUV) photoresists were evaluated under electron beam (EB) exposure. The acid generators (AGs) introducing a trifluoromethyl group as an electron-withdrawing group on the sulfur atom had a much higher reduction potential than current AGs. We determined acid generation efficiency by the 13 C-NMR method and standard titration. The dissolution inhibitory effect on the alkaline developer and the thermal property of the resist film using each AG were also evaluated. The RLS performance of resists containing AGs with a higher acid generation efficiency than conventional AGs was characterized using the relative $Z$-factor under EB exposure.
doi_str_mv 10.1143/JJAP.49.06GF03
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title Fundamental Studies on the Acid Generator to Improve the Resolution, Line Width Roughness, and Sensitivity Tradeoff under Ionizing Radiation
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