Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO 2 Gate Dielectrics

We have studied unusual V th shifts in the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) of yttrium-doped HfO 2 gate dielectrics. Both positive and negative stress conditions introduce shifts in opposite directions for yttrium-doped HfO 2 in the low st...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-04, Vol.49 (4S), p.4
Hauptverfasser:	Sato, Motoyuki, Kamiyama, Satoshi, Matsuki, Takeo, Ishikawa, Dai, Ono, Tetsuro, Morooka, Tetsu, Yugami, Jiro, Ikeda, Kazuto, Ohji, Yuzuru
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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