Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO 2 Gate Dielectrics

Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO 2 Gate Dielectrics

We have studied unusual V th shifts in the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) of yttrium-doped HfO 2 gate dielectrics. Both positive and negative stress conditions introduce shifts in opposite directions for yttrium-doped HfO 2 in the low st...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-04, Vol.49 (4S), p.4
Hauptverfasser: Sato, Motoyuki, Kamiyama, Satoshi, Matsuki, Takeo, Ishikawa, Dai, Ono, Tetsuro, Morooka, Tetsu, Yugami, Jiro, Ikeda, Kazuto, Ohji, Yuzuru
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container_issue 4S
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 49
creator Sato, Motoyuki
Kamiyama, Satoshi
Matsuki, Takeo
Ishikawa, Dai
Ono, Tetsuro
Morooka, Tetsu
Yugami, Jiro
Ikeda, Kazuto
Ohji, Yuzuru
description We have studied unusual V th shifts in the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) of yttrium-doped HfO 2 gate dielectrics. Both positive and negative stress conditions introduce shifts in opposite directions for yttrium-doped HfO 2 in the low stress region. That is, a negative shift under a positive bias and a positive shift under a negative bias were observed. This is due to yttrium-related defects, with electron detrapping for PBTI and electron trapping for NBTI. Such defect formation can be suppressed by incorporating nitrogen into HfO 2 .
doi_str_mv 10.1143/JJAP.49.04DC24
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title Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO 2 Gate Dielectrics
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