Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In--Ga--Zn-Oxide Thin Film Transistor

We fabricated an inverted-staggered amorphous In--Ga--Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage ($V_{\text{th}}$) shift between 120 and 180 \mbox{ \circ C} was as large as 4 V. In an analysis with two-dimensional...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-03, Vol.49 (3), p.03CB04-03CB04-6
Hauptverfasser:	Godo, Hiromichi, Kawae, Daisuke, Yoshitomi, Shuhei, Sasaki, Toshinari, Ito, Shunichi, Ohara, Hiroki, Kishida, Hideyuki, Takahashi, Masahiro, Miyanaga, Akiharu, Yamazaki, Shunpei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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