Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In--Ga--Zn-Oxide Thin Film Transistor
We fabricated an inverted-staggered amorphous In--Ga--Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage ($V_{\text{th}}$) shift between 120 and 180 \mbox{ \circ C} was as large as 4 V. In an analysis with two-dimensional...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2010-03, Vol.49 (3), p.03CB04-03CB04-6 |
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| container_end_page | 03CB04-6 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 49 |
| creator | Godo, Hiromichi Kawae, Daisuke Yoshitomi, Shuhei Sasaki, Toshinari Ito, Shunichi Ohara, Hiroki Kishida, Hideyuki Takahashi, Masahiro Miyanaga, Akiharu Yamazaki, Shunpei |
| description | We fabricated an inverted-staggered amorphous In--Ga--Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage ($V_{\text{th}}$) shift between 120 and 180 \mbox{ \circ C} was as large as 4 V. In an analysis with two-dimensional (2D) numerical simulation, we reproduced the measured result by assuming two types of donor-like states as carrier generation sources. Furthermore, by ab initio molecular dynamics (MD) simulation, we determined the electronic structures of three types of a-IGZO structures, namely, "stoichiometric a-IGZO", "oxygen deficiency", and "hydrogen doping". |
| doi_str_mv | 10.1143/JJAP.49.03CB04 |
| format | Article |
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A threshold voltage ($V_{\text{th}}$) shift between 120 and 180 \mbox{ \circ C} was as large as 4 V. In an analysis with two-dimensional (2D) numerical simulation, we reproduced the measured result by assuming two types of donor-like states as carrier generation sources. Furthermore, by ab initio molecular dynamics (MD) simulation, we determined the electronic structures of three types of a-IGZO structures, namely, "stoichiometric a-IGZO", "oxygen deficiency", and "hydrogen doping".</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.49.03CB04</doi></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In--Ga--Zn-Oxide Thin Film Transistor |
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