Nano Gate Dielectrics for Low Voltage Operation of Organic Thin Film Transistors
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2008-08, Vol.47 (8R), p.6496 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_issue | 8R |
| container_start_page | 6496 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 47 |
| creator | Kim, Kang Dae Kim, Dong Soo Kim, Chung Kyun Song, Chung Kun |
| description | |
| doi_str_mv | 10.1143/JJAP.47.6496 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2008-08, Vol.47 (8R), p.6496 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | Institute of Physics Journals |
| title | Nano Gate Dielectrics for Low Voltage Operation of Organic Thin Film Transistors |
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