Electrical Properties of Reactive Liquid Crystal Semiconductors

Electrical Properties of Reactive Liquid Crystal Semiconductors

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Veröffentlicht in:Japanese Journal of Applied Physics 2008-01, Vol.47 (1S), p.488
Hauptverfasser: McCulloch, Iain, Coelle, Michael, Genevicius, Kristijonas, Hamilton, Rick, Heckmeier, Michael, Heeney, Martin, Kreouzis, Theo, Shkunov, Maxim, Zhang, Weimin
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container_end_page
container_issue 1S
container_start_page 488
container_title Japanese Journal of Applied Physics
container_volume 47
creator McCulloch, Iain
Coelle, Michael
Genevicius, Kristijonas
Hamilton, Rick
Heckmeier, Michael
Heeney, Martin
Kreouzis, Theo
Shkunov, Maxim
Zhang, Weimin
description
doi_str_mv 10.1143/JJAP.47.488
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title Electrical Properties of Reactive Liquid Crystal Semiconductors
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