Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

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Veröffentlicht in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.3277
Hauptverfasser: Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Chi, Dong-Zhi, Lo, Guo-Qiang, Lee, Pooi See, Hoe, Keat-Mun, Chin, Yoke King, Cui, Guang Da
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container_issue 4S
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container_title Japanese Journal of Applied Physics
container_volume 47
creator Tan, Eu Jin
Pey, Kin Leong
Singh, Navab
Chi, Dong-Zhi
Lo, Guo-Qiang
Lee, Pooi See
Hoe, Keat-Mun
Chin, Yoke King
Cui, Guang Da
description
doi_str_mv 10.1143/JJAP.47.3277
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title Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors
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