Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2008-03, Vol.47 (3S), p.1862
Hauptverfasser: Endo, Takahiko, Taniguchi, Yukio, Katou, Tomoya, Shimoto, Shigeyuki, Ohno, Takashi, Azuma, Kazufumi, Matsumura, Masakiyo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 3S
container_start_page 1862
container_title Japanese Journal of Applied Physics
container_volume 47
creator Endo, Takahiko
Taniguchi, Yukio
Katou, Tomoya
Shimoto, Shigeyuki
Ohno, Takashi
Azuma, Kazufumi
Matsumura, Masakiyo
description
doi_str_mv 10.1143/JJAP.47.1862
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_47_1862</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_47_1862</sourcerecordid><originalsourceid>FETCH-LOGICAL-c326t-27056c0b125e39b63258c644c5906e1193f854d8f967181aa01342e576cc1d143</originalsourceid><addsrcrecordid>eNotz91KwzAcBfAgCtbpnQ_QBzAz_3y2N8IoTh1FB5vXIUtTjWStJO3FfHpb9Opwbg7nh9AtkCUAZ_ebzWq75GoJhaRnKAPGFeZEinOUEUIB85LSS3SV0tdUpeCQoYdtcmPT453vPoLDr6MNbkx5bQYXTcireEqDCcH_mMH3Xd63-c7n-0_f5WsfjukaXbQmJHfznwv0vn7cV8-4fnt6qVY1tozKAVNFhLTkAFQ4Vh4ko6KwknMrSiIdQMnaQvCmaEupoABjyPSdOqGktdBMtAW6-9u1sU8pulZ_R3808aSB6NmuZ7vmSs929gt2nkph</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Endo, Takahiko ; Taniguchi, Yukio ; Katou, Tomoya ; Shimoto, Shigeyuki ; Ohno, Takashi ; Azuma, Kazufumi ; Matsumura, Masakiyo</creator><creatorcontrib>Endo, Takahiko ; Taniguchi, Yukio ; Katou, Tomoya ; Shimoto, Shigeyuki ; Ohno, Takashi ; Azuma, Kazufumi ; Matsumura, Masakiyo</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.47.1862</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2008-03, Vol.47 (3S), p.1862</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-27056c0b125e39b63258c644c5906e1193f854d8f967181aa01342e576cc1d143</citedby><cites>FETCH-LOGICAL-c326t-27056c0b125e39b63258c644c5906e1193f854d8f967181aa01342e576cc1d143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Endo, Takahiko</creatorcontrib><creatorcontrib>Taniguchi, Yukio</creatorcontrib><creatorcontrib>Katou, Tomoya</creatorcontrib><creatorcontrib>Shimoto, Shigeyuki</creatorcontrib><creatorcontrib>Ohno, Takashi</creatorcontrib><creatorcontrib>Azuma, Kazufumi</creatorcontrib><creatorcontrib>Matsumura, Masakiyo</creatorcontrib><title>Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotz91KwzAcBfAgCtbpnQ_QBzAz_3y2N8IoTh1FB5vXIUtTjWStJO3FfHpb9Opwbg7nh9AtkCUAZ_ebzWq75GoJhaRnKAPGFeZEinOUEUIB85LSS3SV0tdUpeCQoYdtcmPT453vPoLDr6MNbkx5bQYXTcireEqDCcH_mMH3Xd63-c7n-0_f5WsfjukaXbQmJHfznwv0vn7cV8-4fnt6qVY1tozKAVNFhLTkAFQ4Vh4ko6KwknMrSiIdQMnaQvCmaEupoABjyPSdOqGktdBMtAW6-9u1sU8pulZ_R3808aSB6NmuZ7vmSs929gt2nkph</recordid><startdate>20080301</startdate><enddate>20080301</enddate><creator>Endo, Takahiko</creator><creator>Taniguchi, Yukio</creator><creator>Katou, Tomoya</creator><creator>Shimoto, Shigeyuki</creator><creator>Ohno, Takashi</creator><creator>Azuma, Kazufumi</creator><creator>Matsumura, Masakiyo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080301</creationdate><title>Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films</title><author>Endo, Takahiko ; Taniguchi, Yukio ; Katou, Tomoya ; Shimoto, Shigeyuki ; Ohno, Takashi ; Azuma, Kazufumi ; Matsumura, Masakiyo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-27056c0b125e39b63258c644c5906e1193f854d8f967181aa01342e576cc1d143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Endo, Takahiko</creatorcontrib><creatorcontrib>Taniguchi, Yukio</creatorcontrib><creatorcontrib>Katou, Tomoya</creatorcontrib><creatorcontrib>Shimoto, Shigeyuki</creatorcontrib><creatorcontrib>Ohno, Takashi</creatorcontrib><creatorcontrib>Azuma, Kazufumi</creatorcontrib><creatorcontrib>Matsumura, Masakiyo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Endo, Takahiko</au><au>Taniguchi, Yukio</au><au>Katou, Tomoya</au><au>Shimoto, Shigeyuki</au><au>Ohno, Takashi</au><au>Azuma, Kazufumi</au><au>Matsumura, Masakiyo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2008-03-01</date><risdate>2008</risdate><volume>47</volume><issue>3S</issue><spage>1862</spage><pages>1862-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.47.1862</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2008-03, Vol.47 (3S), p.1862
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_47_1862
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T09%3A43%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Pseudo-Single-Nucleus%20Lateral%20Crystallization%20of%20Si%20Thin%20Films&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Endo,%20Takahiko&rft.date=2008-03-01&rft.volume=47&rft.issue=3S&rft.spage=1862&rft.pages=1862-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.47.1862&rft_dat=%3Ccrossref%3E10_1143_JJAP_47_1862%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true