Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

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Veröffentlicht in:Japanese Journal of Applied Physics 2008-03, Vol.47 (3R), p.1484
Hauptverfasser: Ono, Kenichi, Takemi, Masayoshi
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container_issue 3R
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container_title Japanese Journal of Applied Physics
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creator Ono, Kenichi
Takemi, Masayoshi
description
doi_str_mv 10.1143/JJAP.47.1484
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ispartof Japanese Journal of Applied Physics, 2008-03, Vol.47 (3R), p.1484
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy
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