Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method

Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method

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Veröffentlicht in:Japanese Journal of Applied Physics 2007-04, Vol.46 (4L), p.L323
Hauptverfasser: Yamamoto, Mamiko, Hamazaki, Yuta, Tsukihara, Masashi, Naoi, Yoshiki, Nishino, Katsushi, Sakai, Shiro
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container_issue 4L
container_start_page L323
container_title Japanese Journal of Applied Physics
container_volume 46
creator Yamamoto, Mamiko
Hamazaki, Yuta
Tsukihara, Masashi
Naoi, Yoshiki
Nishino, Katsushi
Sakai, Shiro
description
doi_str_mv 10.1143/JJAP.46.L323
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method
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