Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

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Veröffentlicht in:	Japanese Journal of Applied Physics 2007-09, Vol.46 (9R), p.5782
Hauptverfasser:	Yoshida, Harumasa, Takagi, Yasufumi, Kuwabara, Masakazu, Amano, Hiroshi, Kan, Hirofumi
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Sprache:	eng
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
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