Enhancement of Boron Diffusion in Silicon by Continuous Wave CO 2 Laser Irradiation

Enhancement of Boron Diffusion in Silicon by Continuous Wave CO 2 Laser Irradiation

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Veröffentlicht in:Japanese Journal of Applied Physics 2007-08, Vol.46 (8R), p.5085
Hauptverfasser: Yamada-Kaneta, Hiroshi, Tanahashi, Katsuto, Kakimoto, Koichi, Suto, Shozo
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container_issue 8R
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container_title Japanese Journal of Applied Physics
container_volume 46
creator Yamada-Kaneta, Hiroshi
Tanahashi, Katsuto
Kakimoto, Koichi
Suto, Shozo
description
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ispartof Japanese Journal of Applied Physics, 2007-08, Vol.46 (8R), p.5085
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Enhancement of Boron Diffusion in Silicon by Continuous Wave CO 2 Laser Irradiation
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