Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement

Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement

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Veröffentlicht in:Japanese Journal of Applied Physics 2006-08, Vol.45 (8L), p.L783
Hauptverfasser: Shido, Hideharu, Fukuda, Masatoshi, Mishima, Yasuyoshi
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Sprache:eng
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container_end_page
container_issue 8L
container_start_page L783
container_title Japanese Journal of Applied Physics
container_volume 45
creator Shido, Hideharu
Fukuda, Masatoshi
Mishima, Yasuyoshi
description
doi_str_mv 10.1143/JJAP.45.L783
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_45_L783</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_45_L783</sourcerecordid><originalsourceid>FETCH-LOGICAL-c326t-31eb02aa91285a9eea65ea1a92579d44f1e6b8e44c98ef0c510d9638a02468363</originalsourceid><addsrcrecordid>eNpNkM1KAzEcxIMoWKs3HyAPYGq-uzmW0tqWlhaseFzS7D-4kt0tSSr27e2iBw_DMDAzhx9Cj4yOGJPiebWa7EZSjdbjQlyhARNyTCTV6hoNKOWMSMP5LbpL6fMStZJsgOLmFHJN3m0IePph2xYC3kfbpjrlLmJ_0Y7k8xHwBrINePtdV4Bfoald11Yn15fmNYSKzLwHl_-PdxAv-8a2DvCyOcbuCxpo8z268TYkePjzIXqbz_bTBVlvX5bTyZo4wXUmgsGBcmsN44WyBsBqBZZZw9XYVFJ6BvpQgJTOFOCpU4xWRovCUi51IbQYoqffXxe7lCL48hjrxsZzyWjZ8yp7XqVUZc9L_ACTbl-A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Shido, Hideharu ; Fukuda, Masatoshi ; Mishima, Yasuyoshi</creator><creatorcontrib>Shido, Hideharu ; Fukuda, Masatoshi ; Mishima, Yasuyoshi</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.45.L783</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2006-08, Vol.45 (8L), p.L783</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-31eb02aa91285a9eea65ea1a92579d44f1e6b8e44c98ef0c510d9638a02468363</citedby><cites>FETCH-LOGICAL-c326t-31eb02aa91285a9eea65ea1a92579d44f1e6b8e44c98ef0c510d9638a02468363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Shido, Hideharu</creatorcontrib><creatorcontrib>Fukuda, Masatoshi</creatorcontrib><creatorcontrib>Mishima, Yasuyoshi</creatorcontrib><title>Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNpNkM1KAzEcxIMoWKs3HyAPYGq-uzmW0tqWlhaseFzS7D-4kt0tSSr27e2iBw_DMDAzhx9Cj4yOGJPiebWa7EZSjdbjQlyhARNyTCTV6hoNKOWMSMP5LbpL6fMStZJsgOLmFHJN3m0IePph2xYC3kfbpjrlLmJ_0Y7k8xHwBrINePtdV4Bfoald11Yn15fmNYSKzLwHl_-PdxAv-8a2DvCyOcbuCxpo8z268TYkePjzIXqbz_bTBVlvX5bTyZo4wXUmgsGBcmsN44WyBsBqBZZZw9XYVFJ6BvpQgJTOFOCpU4xWRovCUi51IbQYoqffXxe7lCL48hjrxsZzyWjZ8yp7XqVUZc9L_ACTbl-A</recordid><startdate>20060801</startdate><enddate>20060801</enddate><creator>Shido, Hideharu</creator><creator>Fukuda, Masatoshi</creator><creator>Mishima, Yasuyoshi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060801</creationdate><title>Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement</title><author>Shido, Hideharu ; Fukuda, Masatoshi ; Mishima, Yasuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-31eb02aa91285a9eea65ea1a92579d44f1e6b8e44c98ef0c510d9638a02468363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shido, Hideharu</creatorcontrib><creatorcontrib>Fukuda, Masatoshi</creatorcontrib><creatorcontrib>Mishima, Yasuyoshi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shido, Hideharu</au><au>Fukuda, Masatoshi</au><au>Mishima, Yasuyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2006-08-01</date><risdate>2006</risdate><volume>45</volume><issue>8L</issue><spage>L783</spage><pages>L783-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.45.L783</doi></addata></record>
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1347-4065
language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T12%3A47%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Multi-Wall%20Channel%20Transistor%20for%20P-type%20Metal%20Oxide%20Semiconductor%20Field-Effect%20Transistor%20Performance%20Improvement&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Shido,%20Hideharu&rft.date=2006-08-01&rft.volume=45&rft.issue=8L&rft.spage=L783&rft.pages=L783-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.45.L783&rft_dat=%3Ccrossref%3E10_1143_JJAP_45_L783%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true