Rapid Recrystallization of Amorphous Silicon Utilizing Very-High-Frequency Microplasma Jet at Atmospheric Pressure

The rapid recrystallization of amorphous silicon (a-Si) utilizing a very-high-frequency (VHF) plasma jet of argon (Ar) at atmospheric pressure is investigated. A highly crystallized polycrystalline Si film is synthesized by optimizing the translating velocity of the substrate stage and the flow rate of argon. The temperature of the plasma exposure area reaches 1350±300 °C and the recrystallization of a-Si proceeded with time constants of 30–50 ms. The effects of the translating velocity of the substrate stage and the flow rate of argon on the rapid recrystallization of a-Si are demonstrated along with its mechanism.