Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes

During plasma etching processes, UV and vacuum ultraviolet (VUV) photon irradiation generates defects and causes an increase in interface state density between SiO 2 and Si. To understand the effects of pulse-time-modulated plasma on reducing damage, defects in a SiO 2 film (E' center) after et...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2006-10, Vol.45 (10S), p.8370
Hauptverfasser:	Ichihashi, Yoshinari, Ishikawa, Yasushi, Kato, Yuji, Shimizu, Ryu, Okigawa, Mitsuru, Samukawa, Seiji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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