InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy

We report the first demonstration of room-temperature (RT) lasing at 1.3 µm from the ground state of three-stacked InAs quantum dots (QDs) in an In 0.15 Ga 0.85 As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-µm-long × 15-µm-wide ridge structure,...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2006-10, Vol.45 (10R), p.8010
Hauptverfasser:	Kim, Kwang Woong, Cho, Nam Ki, Ryu, Sung Phil, Song, Jin Dong, Choi, Won Jun, Lee, Jung Il, Park, Jung Ho
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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