Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal

The charge carrier concentration variance in a freestanding Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) has been investigated. A transverse micro-Raman scattering measurement along the [0001] c -axis on the cross section of the n-type GaN was performed to obtain the profi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-02, Vol.44 (2R), p.828
Hauptverfasser:	Yoon, M., Park, Il-Woo, Choi, H., Park, Sung Soo, Koh, Eui Kwan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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