Highly Reliable Flash Cell for Low Power Application

The electrical properties of a split-gate-type flash cell are investigated and optimized by junction engineering to obtain a high reliability. Phosphorus implantation is conducted to form a cell source junction, and the following three different anneal conditions change voltage coupling ratio betwee...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-11, Vol.44 (11R), p.7816
Hauptverfasser:	Park, Young Sam, Choi, Yong Seok, Kang, Sung Taeg, Han, Jeong Uk, Yoon, Seung Beom, Chung, Chil Hee, Yoon, Sung Min, Ryu, Sang Ouk, Yu, Byoung Gon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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