Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films
We investigated the electrical erasing of information recorded by a holographic method in an amorphous As 40 Ge 10 Se 15 S 35 chalcogenide thin film. Even though the amplitude of photoinduced birefringence (Δ n ) strongly depends on applied DC voltage ( V DC ), the kinetics exhibits a tendency. For...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2005-07, Vol.44 (7S), p.5769 |
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creator | Yeo, Choel-Ho Lee, Ki-Nam Shin, Kyung Kim, Jong-Bin Chung, Hong-Bay |
description | We investigated the electrical erasing of information recorded by a holographic method in an amorphous As
40
Ge
10
Se
15
S
35
chalcogenide thin film. Even though the amplitude of photoinduced birefringence (Δ
n
) strongly depends on applied DC voltage (
V
DC
), the kinetics exhibits a tendency. For
V
DC
=0–3 V, Δ
n
increases with increasing induction time and eventually saturates to its maximum (Δ
n
max
) even though its saturation time and amplitude are not the same at different
V
DC
's. For
V
DC
>4, Δ
n
increases rapidly at the start of the induction process (within several seconds), reaches Δ
n
max
and then decreases very slowly. In addition, phase gratings in amorphous As
40
Ge
10
Se
15
S
35
films were formed by the holographic method and diffraction efficiency (η) was monitored in real time. Immediately after reaches its maximum (η
max
), a short pulse was applied to the sample which cause a marked decrease in diffraction efficiency (η=0.25%→η≪10
-3
). |
doi_str_mv | 10.1143/JJAP.44.5769 |
format | Article |
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40
Ge
10
Se
15
S
35
chalcogenide thin film. Even though the amplitude of photoinduced birefringence (Δ
n
) strongly depends on applied DC voltage (
V
DC
), the kinetics exhibits a tendency. For
V
DC
=0–3 V, Δ
n
increases with increasing induction time and eventually saturates to its maximum (Δ
n
max
) even though its saturation time and amplitude are not the same at different
V
DC
's. For
V
DC
>4, Δ
n
increases rapidly at the start of the induction process (within several seconds), reaches Δ
n
max
and then decreases very slowly. In addition, phase gratings in amorphous As
40
Ge
10
Se
15
S
35
films were formed by the holographic method and diffraction efficiency (η) was monitored in real time. Immediately after reaches its maximum (η
max
), a short pulse was applied to the sample which cause a marked decrease in diffraction efficiency (η=0.25%→η≪10
-3
).</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.44.5769</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5769</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-6fb0f262998198bdb73c75192890a6da943d89998c1db0901d9e08477387c7433</citedby><cites>FETCH-LOGICAL-c383t-6fb0f262998198bdb73c75192890a6da943d89998c1db0901d9e08477387c7433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Yeo, Choel-Ho</creatorcontrib><creatorcontrib>Lee, Ki-Nam</creatorcontrib><creatorcontrib>Shin, Kyung</creatorcontrib><creatorcontrib>Kim, Jong-Bin</creatorcontrib><creatorcontrib>Chung, Hong-Bay</creatorcontrib><title>Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films</title><title>Japanese Journal of Applied Physics</title><description>We investigated the electrical erasing of information recorded by a holographic method in an amorphous As
40
Ge
10
Se
15
S
35
chalcogenide thin film. Even though the amplitude of photoinduced birefringence (Δ
n
) strongly depends on applied DC voltage (
V
DC
), the kinetics exhibits a tendency. For
V
DC
=0–3 V, Δ
n
increases with increasing induction time and eventually saturates to its maximum (Δ
n
max
) even though its saturation time and amplitude are not the same at different
V
DC
's. For
V
DC
>4, Δ
n
increases rapidly at the start of the induction process (within several seconds), reaches Δ
n
max
and then decreases very slowly. In addition, phase gratings in amorphous As
40
Ge
10
Se
15
S
35
films were formed by the holographic method and diffraction efficiency (η) was monitored in real time. Immediately after reaches its maximum (η
max
), a short pulse was applied to the sample which cause a marked decrease in diffraction efficiency (η=0.25%→η≪10
-3
).</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkMFOhDAARBujibh68wP6AYItLbQ9EsLuutmoh_VMSlugBihp8eDfC1lPk5mXzOEB8IxRgjElr6dT8ZlQmmQsFzcgwoSymKI8uwURQimOqUjTe_AQwvda84ziCLxXg1GLt0oOsPIy2KmDroVHN7jOy7m3Ch68XLbZTrAYnZ979xNg2ctBuc5MVht46Ve2t8MYHsFdK4dgnv5zB7721aU8xuePw1tZnGNFOFnivG1Qm-apEBwL3uiGEcUyLFIukMy1FJRoLlaqsG6QQFgLgzhljHCmGCVkB16uv8q7ELxp69nbUfrfGqN6c1FvLmpK680F-QN0OlC1</recordid><startdate>20050701</startdate><enddate>20050701</enddate><creator>Yeo, Choel-Ho</creator><creator>Lee, Ki-Nam</creator><creator>Shin, Kyung</creator><creator>Kim, Jong-Bin</creator><creator>Chung, Hong-Bay</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050701</creationdate><title>Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films</title><author>Yeo, Choel-Ho ; Lee, Ki-Nam ; Shin, Kyung ; Kim, Jong-Bin ; Chung, Hong-Bay</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-6fb0f262998198bdb73c75192890a6da943d89998c1db0901d9e08477387c7433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yeo, Choel-Ho</creatorcontrib><creatorcontrib>Lee, Ki-Nam</creatorcontrib><creatorcontrib>Shin, Kyung</creatorcontrib><creatorcontrib>Kim, Jong-Bin</creatorcontrib><creatorcontrib>Chung, Hong-Bay</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yeo, Choel-Ho</au><au>Lee, Ki-Nam</au><au>Shin, Kyung</au><au>Kim, Jong-Bin</au><au>Chung, Hong-Bay</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2005-07-01</date><risdate>2005</risdate><volume>44</volume><issue>7S</issue><spage>5769</spage><pages>5769-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We investigated the electrical erasing of information recorded by a holographic method in an amorphous As
40
Ge
10
Se
15
S
35
chalcogenide thin film. Even though the amplitude of photoinduced birefringence (Δ
n
) strongly depends on applied DC voltage (
V
DC
), the kinetics exhibits a tendency. For
V
DC
=0–3 V, Δ
n
increases with increasing induction time and eventually saturates to its maximum (Δ
n
max
) even though its saturation time and amplitude are not the same at different
V
DC
's. For
V
DC
>4, Δ
n
increases rapidly at the start of the induction process (within several seconds), reaches Δ
n
max
and then decreases very slowly. In addition, phase gratings in amorphous As
40
Ge
10
Se
15
S
35
films were formed by the holographic method and diffraction efficiency (η) was monitored in real time. Immediately after reaches its maximum (η
max
), a short pulse was applied to the sample which cause a marked decrease in diffraction efficiency (η=0.25%→η≪10
-3
).</abstract><doi>10.1143/JJAP.44.5769</doi></addata></record> |
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language | eng |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films |
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