Numerical Investigation of Defect Printability in Extreme Ultraviolet (EUV) Reflector: Ru/Mo/Si Multilayer System

The defect printability of Mo/Si and Ru/Mo/Si multilayer (ML) systems for extreme ultraviolet (EUV) reflectors was quantitatively investigated by monitoring aerial images on a wafer. The aerial image intensity of the Ru/Mo/Si model was calculated and compared with that of the Mo/Si model for various...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-07, Vol.44 (7S), p.5724
Hauptverfasser:	Kang, In-Yong, Ahn, Jinho, Oh, Hye-Keun, Chung, Yong-Chae
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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