Advanced HSPICE Macromodel for Magnetic Tunnel Junction

Advanced HSPICE Macromodel for Magnetic Tunnel Junction

Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is...

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Veröffentlicht in:Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2696
Hauptverfasser: Lee, Seungyeon, Lee, Seungjun, Shin, Hyungsoon, Kim, Daejung
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container_title Japanese Journal of Applied Physics
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creator Lee, Seungyeon
Lee, Seungjun
Shin, Hyungsoon
Kim, Daejung
description Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R – V characteristics.
doi_str_mv 10.1143/JJAP.44.2696
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title Advanced HSPICE Macromodel for Magnetic Tunnel Junction
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