Novel Si Codoped Pb(Zr,Ti,Nb)O 3 Thin Film for High-Density Ferroelectric Random Access Memory

We have succeeded in fabricating Pb(Zr,Ti,Nb)O 3 (PZTN) thin films with more than 10 at.% Nb at the B site in the A B O 3 structure, which are suitable for application to high-density and reliable ferroelectric random access memory (FeRAM). To prepare the PZTN thin films, we used a sol-gel spin-coat...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-01, Vol.44 (1R), p.267
Hauptverfasser:	Kijima, Takeshi, Aoyama, Taku, Miyazawa, Hiromu, Hamada, Yasuaki, Ohashi, Koji, Nakayama, Masao, Natori, Eiji, Shimoda, Tatsuya
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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