Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process

An oxidation process was applied to the fabrication of fluoride resonant tunneling diodes (RTDs) on Si substrates. The oxidation process was carried out after the growth of an ultrathin CaF 2 layer on Si, and expected to passivate the Si surface in pinholes generated in the CaF 2 layer. Leakage curr...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2637
Hauptverfasser:	Watanabe, So, Maeda, Motoki, Sugisaki, Tsuyoshi, Tsutsui, Kazuo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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