Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO 2 CMOSFETs

The mechanisms of gate leakage current and that of time dependent dielectric breakdown (TDDB) failure of HfSiON/SiO 2 gate dielectrics having an equivalent oxide thickness of 1.6 nm were investigated. The leakage current mechanism was found to be different for low and high electric fields, which we...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2441
Hauptverfasser:	Terai, Masayuki, Yabe, Yuko, Fujieda, Shinji, Morioka, Ayuka, Kotsuji, Setsu, Iwamoto, Toshiyuki, Saitoh, Motofumi, Ogura, Takashi, Saito, Yukishige, Watanabe, Hirohito
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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