Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Boron penetration from the poly-silicon gate to the silicon substrate through gate dielectrics is a crucial problem in the dual gate complementary metal-oxide semiconductor (CMOS) process. Therefore, the plasma nitridation technique has been studied well, and it has succeeded to suppress boron penet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2157
Hauptverfasser:	Hayashi, Takashi, Yamashita, Tomohiro, Shiga, Katsuya, Hayashi, Kiyoshi, Oda, Hidekazu, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!