Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects

We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-04, Vol.44 (4R), p.1626
Hauptverfasser:	Nihei, Mizuhisa, Kawabata, Akio, Kondo, Daiyu, Horibe, Masahiro, Sato, Shintaro, Awano, Yuji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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