Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO 2 as Charge-Trapping Layer and Al 2 O 3 as Blocking Layer

We have investigated a charge-trapping nonvolatile memory (NVM) device with high- k dielectrics as a charge-trapping layer (HfO 2 and Dy-doped HfO 2 ) and a blocking layer (Al 2 O 3 ). Compared with a conventional SiO 2 /Si 3 N 4 /SiO 2 stack, both SiO 2 /HfO 2 /Al 2 O 3 and SiO 2 /Dy-doped HfO 2 /A...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2004-07, Vol.43 (7A), p.L882
Hauptverfasser:	Choi, Sangmoo, Cho, Myungjun, Samantaray, Chandan B., Jeon, Sanghun, Kim, Chungwoo, Hwang, Hyunsang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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