In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

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Veröffentlicht in:	Japanese Journal of Applied Physics 2004-10, Vol.43 (No. 10A), p.L1247-L1249
Hauptverfasser:	Tsuchiya, Tomonobu, Kitatani, Takeshi, Ouchi, Kiyoshi, Sato, Hiroshi, Aoki, Masahiko
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Sprache:	eng
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container_title	Japanese Journal of Applied Physics
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creator	Tsuchiya, Tomonobu Kitatani, Takeshi Ouchi, Kiyoshi Sato, Hiroshi Aoki, Masahiko
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ispartof	Japanese Journal of Applied Physics, 2004-10, Vol.43 (No. 10A), p.L1247-L1249
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor
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