SiO 2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

The etching of contact holes of 0.1 µm size in SiO 2 is achieved using, for the first time, cyclic (c-)C 5 F 8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C 4 F 8 . It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO 2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.