Novel Storage-Node Contacts with Stacked Point-Cusp Magnetron Sp-TiN Barrier for Metal–Insulator–Metal Ru/Ta 2 O 5 /Ru Capacitors in Gigabit Dynamic Random Access Memories

We have investigated a mechanism for increasing the contact resistance ( R c ) of the ruthenium (Ru) and the titanium nitride (TiN) barrier during the tantalum oxide (Ta 2 O 5 ) oxidation annealing in the metal–insulator–metal (MIM) capacitors. It has been found that controlling the atomic ratio of...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2004-06, Vol.43 (6R), p.3315
Hauptverfasser:	Kawagoe, Tsuyoshi, Nakamura, Yoshitaka, Kuroki, Keiji, Asano, Isamu, Goto, Hidekazu, Nakanishi, Naruhiko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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