Possible Deviation from the well-known Threshold Behavior of Field-Effect Doping Phenomenon in Extremely Thin Organic Semiconductor Layer

Field-effect doping in a metal/insulator/semiconductor/metal four-layer model indicates that the well-known threshold behavior Q ∝( V G - V th ), where Q is the induced charge and V G and V th are the bias voltage and its threshold value, respectively, should be realized even when the thickness of t...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2004, Vol.43 (5R), p.2735
1. Verfasser:	Ikegami, Keiichi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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