Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

We fabricated non-recessed-gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) with a gate length L g of 120 nm. As gate metals, Ni/Pt/Au and Mo/Pt/Au were used. The Ni/Pt/Au-gate HEMTs with rapid thermal annealing (RTA) at 500°C were normally-off at a gate-source vol...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2004-04, Vol.43 (4S), p.2255
Hauptverfasser:	Endoh, Akira, Yamashita, Yoshimi, Ikeda, Keiji, Higashiwaki, Masataka, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!