Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure

Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure

Time-resolved photoluminescence experiments have been performed to investigate exciton spin relaxation processes at low temperatures in InAlAs-InGaAs asymmetric double quantum dots embedded in AlGaAs layers. By decreasing the thickness of the AlGaAs barrier between the dots, the spin relaxation time...

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Veröffentlicht in:Japanese Journal of Applied Physics 2004-04, Vol.43 (4S), p.2110
Hauptverfasser: Sasakura, Hirotaka, Adachi, Satoru, Muto, Shunichi, Song, Hai Zhi, Miyazawa, Toshiyuki, Usuki, Tatsuya
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container_issue 4S
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container_title Japanese Journal of Applied Physics
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creator Sasakura, Hirotaka
Adachi, Satoru
Muto, Shunichi
Song, Hai Zhi
Miyazawa, Toshiyuki
Usuki, Tatsuya
description Time-resolved photoluminescence experiments have been performed to investigate exciton spin relaxation processes at low temperatures in InAlAs-InGaAs asymmetric double quantum dots embedded in AlGaAs layers. By decreasing the thickness of the AlGaAs barrier between the dots, the spin relaxation times decreased from 3 ns to 1 ns. The observed spin relaxation as a function of barrier thickness was reasonably described by two components: one was a constant and the other was exponentially depended on barrier thickness. The origin of the latter component is discussed in connection with spin-flip tunneling.
doi_str_mv 10.1143/JJAP.43.2110
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title Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure
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