Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy

The electrical performances of sub-50-nm n-metal-oxide-semiconductor field effect transistors (n-MOSFETs) are improved when a plasma nitridation process is used after the gate electrodes are formed. The maximum drive current is increased by 2% and the minimum gate length is shrunk by 5% while the of...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2004, Vol.43 (4S), p.1729
Hauptverfasser:	Fukutome, Hidenobu, Saiki, Takashi, Hori, Mitsuaki, Tanaka, Takuji, Nakamura, Ryou, Arimoto, Hiroshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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