Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) –Investigation of the Crystallographic Structure

We have investigated crystal defects in the epitaxial layer on nitrogen-doped Czochralski-grown silicon (CZ-Si) substrate. It was found that two types of crystal defects are generated in the epitaxial layer on the nitrogen-doped CZ-Si substrate. One is revealed to be a stacking fault and the other i...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2004-04, Vol.43 (4R), p.1241
Hauptverfasser:	Nakai, Katsuhiko, Kitahara, Koichi, Ohta, Yasumitsu, Ikari, Atsushi, Tanaka, Masahiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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