Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

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Veröffentlicht in:Japanese Journal of Applied Physics 2003-01, Vol.42 (Part 2, No.1A/B), p.L4-L6
Hauptverfasser: Kawamura, Fumio, Iwahashi, Tomoya, Omae, Kunimichi, Morishita, Masanori, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo
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container_end_page L6
container_issue Part 2, No.1A/B
container_start_page L4
container_title Japanese Journal of Applied Physics
container_volume 42
creator Kawamura, Fumio
Iwahashi, Tomoya
Omae, Kunimichi
Morishita, Masanori
Yoshimura, Masashi
Mori, Yusuke
Sasaki, Takatomo
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doi_str_mv 10.1143/JJAP.42.L4
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ispartof Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 2, No.1A/B), p.L4-L6
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique
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