Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C

Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C

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Veröffentlicht in:Japanese Journal of Applied Physics 2003-09, Vol.42 (Part 2, No.9A/B), p.L1083-L1086
Hauptverfasser: Asano, Gouji, Oikawa, Takahiro, Funakubo, Hiroshi, Saito, Keisuke
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container_end_page L1086
container_issue Part 2, No.9A/B
container_start_page L1083
container_title Japanese Journal of Applied Physics
container_volume 42
creator Asano, Gouji
Oikawa, Takahiro
Funakubo, Hiroshi
Saito, Keisuke
description
doi_str_mv 10.1143/JJAP.42.L1083
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_42_L1083</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_42_L1083</sourcerecordid><originalsourceid>FETCH-LOGICAL-c823-19086565ff3d140501b0f3323fc1c69c107bceff8e707c6b5d73c492c102f4853</originalsourceid><addsrcrecordid>eNotkEtLw0AUhWehYK0u3d-lgqnzzGNZa9MHgRbJyk3ITGbsSNopk3GRnT_J3-AvM63ChcvlHO7hfAjdETwhhLOn9Xq6nXA6KQhO2QUaYUxJxDNKr9B1130MZyw4GaGvhXMN5Np7p1utgrfKhh6cga28f_OPpX3YAINyZw-Q23bfQV7LwVQH3YDsYWnfd20Pr_roXfOprGw1vOij62yw7gDDPLsQ3B5WHubnANdoqAOwTMDPN8xu0KWp207f_u8xKvN5OVtGxWaxmk2LSKWURSTDaSxiYQxrCMcCE4kNY5QZRVScKYITqbQxqU5womIpmoSpoe4gUMNTwcYo-nurvOs6r0119HZf-74iuDoRq07EKk6rMzH2Cz9DX-c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Asano, Gouji ; Oikawa, Takahiro ; Funakubo, Hiroshi ; Saito, Keisuke</creator><creatorcontrib>Asano, Gouji ; Oikawa, Takahiro ; Funakubo, Hiroshi ; Saito, Keisuke</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>DOI: 10.1143/JJAP.42.L1083</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2003-09, Vol.42 (Part 2, No.9A/B), p.L1083-L1086</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c823-19086565ff3d140501b0f3323fc1c69c107bceff8e707c6b5d73c492c102f4853</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Asano, Gouji</creatorcontrib><creatorcontrib>Oikawa, Takahiro</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><creatorcontrib>Saito, Keisuke</creatorcontrib><title>Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkEtLw0AUhWehYK0u3d-lgqnzzGNZa9MHgRbJyk3ITGbsSNopk3GRnT_J3-AvM63ChcvlHO7hfAjdETwhhLOn9Xq6nXA6KQhO2QUaYUxJxDNKr9B1130MZyw4GaGvhXMN5Np7p1utgrfKhh6cga28f_OPpX3YAINyZw-Q23bfQV7LwVQH3YDsYWnfd20Pr_roXfOprGw1vOij62yw7gDDPLsQ3B5WHubnANdoqAOwTMDPN8xu0KWp207f_u8xKvN5OVtGxWaxmk2LSKWURSTDaSxiYQxrCMcCE4kNY5QZRVScKYITqbQxqU5womIpmoSpoe4gUMNTwcYo-nurvOs6r0119HZf-74iuDoRq07EKk6rMzH2Cz9DX-c</recordid><startdate>20030915</startdate><enddate>20030915</enddate><creator>Asano, Gouji</creator><creator>Oikawa, Takahiro</creator><creator>Funakubo, Hiroshi</creator><creator>Saito, Keisuke</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030915</creationdate><title>Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C</title><author>Asano, Gouji ; Oikawa, Takahiro ; Funakubo, Hiroshi ; Saito, Keisuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c823-19086565ff3d140501b0f3323fc1c69c107bceff8e707c6b5d73c492c102f4853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asano, Gouji</creatorcontrib><creatorcontrib>Oikawa, Takahiro</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><creatorcontrib>Saito, Keisuke</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asano, Gouji</au><au>Oikawa, Takahiro</au><au>Funakubo, Hiroshi</au><au>Saito, Keisuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2003-09-15</date><risdate>2003</risdate><volume>42</volume><issue>Part 2, No.9A/B</issue><spage>L1083</spage><epage>L1086</epage><pages>L1083-L1086</pages><issn>0021-4922</issn><doi>10.1143/JJAP.42.L1083</doi></addata></record>
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title Good Ferroelectricity of Pb(Zr,Ti)O 3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395 ° C
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T22%3A46%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Good%20Ferroelectricity%20of%20Pb(Zr,Ti)O%203%20Thin%20Films%20Fabricated%20by%20Highly%20Reproducible%20Deposition%20on%20Bottom%20Ir%20Electrode%20at%20395%20%C2%B0%20C&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Asano,%20Gouji&rft.date=2003-09-15&rft.volume=42&rft.issue=Part%202,%20No.9A/B&rft.spage=L1083&rft.epage=L1086&rft.pages=L1083-L1086&rft.issn=0021-4922&rft_id=info:doi/10.1143/JJAP.42.L1083&rft_dat=%3Ccrossref%3E10_1143_JJAP_42_L1083%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true