0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications
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Veröffentlicht in: | Japanese Journal of Applied Physics 2003-08, Vol.42 (Part 1, No. 8), p.4982-4986 |
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container_issue | Part 1, No. 8 |
container_start_page | 4982 |
container_title | Japanese Journal of Applied Physics |
container_volume | 42 |
creator | Tsui, Kenneth Chen, Kevin J. Lam, Sang Chan, Mansun |
description | |
doi_str_mv | 10.1143/JJAP.42.4982 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_42_4982</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_42_4982</sourcerecordid><originalsourceid>FETCH-LOGICAL-c802-1b7feb834084aed9ad36f623ff650bdca8a715d6706f171e114f232f1cfad4343</originalsourceid><addsrcrecordid>eNotkN1KxDAQhYMouK7e-QB5AFvz17S9LMuu67Kyi-19SZMMRtptTSrqg_kCPpktCnOYMzNwYD6EbimJKRX8frcrjrFgscgzdoYWlIs0EkQm52hBCKORyBm7RFchvE6jTARdoDcSJ_jnu8Ola53uT9FUpRqGF-ctfrKjavHh0xmLS9vNd_Oux97jjbOtwWsAq0dceXUKLsx7mPS8wcf-w3pcdEPrwM1umJxWo-tP4RpdgGqDvfnvS1Rt1tVqG-0PD4-rYh_pjLCINinYJuOCZEJZkyvDJUjGAWRCGqNVplKaGJkSCTSldvofGGdANSgjuOBLdPcXq30fgrdQD951yn_VlNQzrXqmVQtWz7T4L0OzXnc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications</title><source>Institute of Physics Journals</source><creator>Tsui, Kenneth ; Chen, Kevin J. ; Lam, Sang ; Chan, Mansun</creator><creatorcontrib>Tsui, Kenneth ; Chen, Kevin J. ; Lam, Sang ; Chan, Mansun</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.42.4982</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2003-08, Vol.42 (Part 1, No. 8), p.4982-4986</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c802-1b7feb834084aed9ad36f623ff650bdca8a715d6706f171e114f232f1cfad4343</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tsui, Kenneth</creatorcontrib><creatorcontrib>Chen, Kevin J.</creatorcontrib><creatorcontrib>Lam, Sang</creatorcontrib><creatorcontrib>Chan, Mansun</creatorcontrib><title>0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkN1KxDAQhYMouK7e-QB5AFvz17S9LMuu67Kyi-19SZMMRtptTSrqg_kCPpktCnOYMzNwYD6EbimJKRX8frcrjrFgscgzdoYWlIs0EkQm52hBCKORyBm7RFchvE6jTARdoDcSJ_jnu8Ola53uT9FUpRqGF-ctfrKjavHh0xmLS9vNd_Oux97jjbOtwWsAq0dceXUKLsx7mPS8wcf-w3pcdEPrwM1umJxWo-tP4RpdgGqDvfnvS1Rt1tVqG-0PD4-rYh_pjLCINinYJuOCZEJZkyvDJUjGAWRCGqNVplKaGJkSCTSldvofGGdANSgjuOBLdPcXq30fgrdQD951yn_VlNQzrXqmVQtWz7T4L0OzXnc</recordid><startdate>20030815</startdate><enddate>20030815</enddate><creator>Tsui, Kenneth</creator><creator>Chen, Kevin J.</creator><creator>Lam, Sang</creator><creator>Chan, Mansun</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030815</creationdate><title>0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications</title><author>Tsui, Kenneth ; Chen, Kevin J. ; Lam, Sang ; Chan, Mansun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c802-1b7feb834084aed9ad36f623ff650bdca8a715d6706f171e114f232f1cfad4343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsui, Kenneth</creatorcontrib><creatorcontrib>Chen, Kevin J.</creatorcontrib><creatorcontrib>Lam, Sang</creatorcontrib><creatorcontrib>Chan, Mansun</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsui, Kenneth</au><au>Chen, Kevin J.</au><au>Lam, Sang</au><au>Chan, Mansun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2003-08-15</date><risdate>2003</risdate><volume>42</volume><issue>Part 1, No. 8</issue><spage>4982</spage><epage>4986</epage><pages>4982-4986</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.42.4982</doi><tpages>5</tpages></addata></record> |
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ispartof | Japanese Journal of Applied Physics, 2003-08, Vol.42 (Part 1, No. 8), p.4982-4986 |
issn | 0021-4922 1347-4065 |
language | eng |
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source | Institute of Physics Journals |
title | 0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T22%3A32%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=0.5%20%C2%B5m%20Silicon-on-Sapphire%20Metal%20Oxide%20Semiconductor%20Field%20Effect%20Transistor%20for%20RF%20Power%20Amplifier%20Applications&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Tsui,%20Kenneth&rft.date=2003-08-15&rft.volume=42&rft.issue=Part%201,%20No.%208&rft.spage=4982&rft.epage=4986&rft.pages=4982-4986&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.42.4982&rft_dat=%3Ccrossref%3E10_1143_JJAP_42_4982%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |