Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy

We succeeded in growing InN films two-dimensionally by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE), using a low-temperature-grown InN buffer layer. From the results of reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction (XRD) measurement, it was found that a single crystal of InN films with a wurtzite structure was obtained. Moreover, from the results of Hall effect measurement, it was found that the InN films had quite high electron mobilities. The best electron mobility at room temperature obtained in this study was 760 cm 2 /V·s and the corresponding carrier density was 3.0×10 19 cm -3 . To our knowledge, this electron mobility is the highest value ever reported for single crystal InN films.