Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd 1-x Mn x GeP 2

High concentration of Mn atoms has been incorporated in the surface region of II-IV-V 2 type chalcopyrite semiconductor CdGeP 2 . Photoluminescence spectrum at 20 K shows a peak around 3.2 eV, suggesting that the incorporation of Mn introduces an energy gap much higher than that of the host semicond...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000-10, Vol.39 (10A), p.L949
Hauptverfasser: A. Medvedkin, Gennadiy, Takayuki Ishibashi, Takayuki Ishibashi, Takao Nishi, Takao Nishi, Koji Hayata, Koji Hayata, Yoichi Hasegawa, Yoichi Hasegawa, Katsuaki Sato, Katsuaki Sato
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container_issue 10A
container_start_page L949
container_title Japanese Journal of Applied Physics
container_volume 39
creator A. Medvedkin, Gennadiy
Takayuki Ishibashi, Takayuki Ishibashi
Takao Nishi, Takao Nishi
Koji Hayata, Koji Hayata
Yoichi Hasegawa, Yoichi Hasegawa
Katsuaki Sato, Katsuaki Sato
description High concentration of Mn atoms has been incorporated in the surface region of II-IV-V 2 type chalcopyrite semiconductor CdGeP 2 . Photoluminescence spectrum at 20 K shows a peak around 3.2 eV, suggesting that the incorporation of Mn introduces an energy gap much higher than that of the host semiconductor ( E g =1.83 eV). Prominent magnetic hysteresis loops with coercivity of 0.5 kOe has been observed at room temperature. Magnetic force microscope (MFM) measurements reveal a stripe-shaped domain pattern on the top surface. Magneto-optical Kerr ellipticity spectrum measured at room temperature show a prominent peak at 1.7 eV and a broad tail up to 3.5 eV. We tentatively attribute the ferromagnetism to the double exchange interaction between Mn 2+ and Mn 3+ states due to the structural feature of II-IV-V 2 type chalcopyrite compounds.
doi_str_mv 10.1143/JJAP.39.L949
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title Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd 1-x Mn x GeP 2
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