High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C

We present results from excimer laser processed poly-silicon thin film transistors fabricated on a plastic substrate. Except for the temperature rise during excimer laser irradiation for crystallization, the highest processing temperature that the substrate was subjected to was 110°C. Transistor fie...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2000-03, Vol.39 (3A), p.L179
Hauptverfasser:	Gosain, Dharam Pal, Noguchi, Takashi, Usui, Setsuo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!